STMicroelectronics SGT120R65AL 650V E-Mode PowerGaN Transistor

STMicroelectronics SGT120R65AL 650V E-Mode PowerGaN Transistor offers 15A maximum current capability combined with well-established packaging technology and a Kelvin source connection for optimum gate driving. The resulting G-HEMT device provides extremely low conduction losses, high current capability, and ultra-fast switching operation to enable high power density and unbeatable efficiency. The SGT120R65AL is available n an industry-standard PowerFLAT 5×6 HV compact surface-mount package. Typical applications include PC adaptors, USB wall chargers, and wireless charging.

Features

Enhancement mode normally-off transistor
Very high switching speed
High power management capability
Extremely low capacitances

Kelvin source pad for optimum gate driving
Zero reverse recovery charge
PowerFLAT 5×6 HV package for PowerGaN

Applications

PC adapters
USB wall chargers
Wireless chargers

Specifications

650V to 750V Drain-source voltage range
-10V to 7V Gate-source voltage range
9A to 15A Continuous drain current range
36A Pulse drain current
6.25W to 192W Total power dissipation range

-55°C to +150°C Temperature range
Thermal resistance
- 0.65°C/W Junction-to-case
- 20°C/W Junction-to-board

STMicroelectronics SGT120R65AL 650V E-Mode PowerGaN Transistor

Features

Applications

Specifications

Application Circuit

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