Renesas Electronics High-Performance Serial MRAM

Renesas Electronics High-Performance Serial MRAM are non-volatile Magnetoresistive Random-Access Memory (MRAM) devices with a read and write speed up to 108MHz. MRAM technology is analogous to Flash technology with SRAM compatible read/write timings (Persistent SRAM, P-SRAM). Data is always non-volatile with 1016 write cycle endurance and greater than 20-year retention at +85°C. MRAM is a true random-access memory; allowing both reads and writes to occur randomly in memory. MRAM is ideal for applications that must store and retrieve data without incurring large latency penalties. It offers low latency, low power, infinite endurance, and scalable non-volatile memory technology.

Features

Interface
- Serial Peripheral Interface QSPI (4-4-4)
- Single Data Rate Mode: 108MHz
- Double Data Rate Mode: 54MHz
Technology
- 40nm pMTJ STT-MRAM
- Data Endurance: 10¹⁶ write cycles
- Data Retention: 20 years at +85°C
Density
- 4Mb, 8Mb, 16Mb
Operating Voltage Range
- VCC: 1.71V to 2.0V
- VCC: 2.7V to 3.6V
Operating Temperature Range
- Industrial: -40°C to +85°C
- Industrial Plus: -40°C to +105°C

Packages
- 8-pad DFN (WSON) (5.0mm x 6.0mm)
- 8-pin SOIC (5.2mm x 5.2mm)
Data Protection
- Hardware Based: Write Protect Pin (WP#)
- Software Based: Address Range Selectable through Configuration bits (Top/Bottom, Block Protect [2:0])
Identification
- 64-bit Unique ID
- 64-bit User Programmable Serial Number
Augmented Storage Array
- 256-byte User Programmable with Write Protection
Supports JEDEC Reset
RoHS Compliant

Applications

Ideal for applications that must store and retrieve data without incurring large latency
Factory automation
Multifunction printers

Industrial control and monitoring
Medical diagnostics
Data switches and routers

Documents

Datasheet

Family Overview

Videos

Block Diagram

Renesas Electronics High-Performance Serial MRAM

Application Notes

Programming Non-Volatile Registers to Factory Default State Post-Reflow