NXP Semiconductors RAPIDRF-26E39 RapidRF Front-End Design

NXP Semiconductors RAPIDRF-26E39 RapidRF Front-End Design provides a reference design for 5G infrastructure, based on the AFSC5G26E39 Airfast® Power Amplifier Module. The AFSC5G26E39 is a fully integrated Doherty power amplifier module with a 2496MHz to 2690MHz frequency range. The device is optimized for applications such as massive MIMO systems, outdoor small cells, and low-power remote radio heads.

The NXP Semiconductors RapidRF Front-End Designs integrate an RF power amplifier, Rx LNAs, a T/R switch, a circulator, and a bias controller in a compact footprint. They incorporate a coupler for DPD feedback and are to be used with digital pre-distortion.

The RapidRF Reference Boards are ideal for 5G radio units requiring 2.5W to 5.0W (34dBm to 37dBm) average transmit power at the antenna. Versions for different bands use a common PCB layout, simplifying both design and manufacturing for faster time-to-market.

Features

Designed for 64T, 5W RUs (320W typical power at each antenna)
28V LDMOS RF Front End Design
2496MHz to 2690MHz frequency range
Target band B42
47.1dB peak (50W)
39.0dBm (8W) at 8.0dB OBO at 27V
56dB gain
37% lineup efficiency with circulator
50Ω input/output

200MHz instantaneous bandwidth (IBW)
Auto bias with temperature compensation
Time-division duplex (TDD) operation
Digital pre-distortion (DPD) path
57.15mm x 38.35mm board size
Key components
- AFSC5G26E39 Airfast Power Amplifier Module
- AFRX5G272 Airfast Rx Module
- AFLP5G35645 Airfast Pre-Driver Module

Applications

5G massive MIMO radio units
Drivers for traditional macro base stations

Open RAN and proprietary Radio Access Networks
Outdoor small cells

NXP Semiconductors RAPIDRF-26E39 RapidRF Front-End Design

Features

Applications

Board Layout

Block Diagram

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