onsemi M3S 1200V Silicon Carbide (SiC) MOSFETs

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Description

onsemi M3S 1200V Silicon Carbide (SiC) MOSFETs

onsemi M3S 1200V Silicon Carbide (SiC) MOSFETs are optimized for fast switching applications. The planar technology works reliably with negative gate voltage drive and turn-off spikes on the gate. The onsemi M3S 1200V MOSFETs provide optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive. The M3S offers low switching losses and is housed in a TO247-4LD package for low common source inductance.

Features

  • TO247-4LD package for low common source inductance
  • 15V to 18V Gate drive
  • M3S technology of 22mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche tested
  • Reduced EON losses
  • 18V for best performance; 15V for compatibility with IGBT driver circuits
  • Improved power density
  • Improved robustness to unexpected incoming voltage spikes or ringing

Applications

  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion
  • UPS
  • Electric vehicle chargers
  • Solar inverters
  • Energy storage systems

Resources

  • Whitepaper: Introduction To onsemi M3S SiC MOSFET Technology

Internal Circuit Diagram

Schematic - onsemi M3S 1200V Silicon Carbide (SiC) MOSFETs