Vishay VSMA1085750X02 High Power Infrared Emitting Diode

Vishay VSMA1085750X02 High Power Infrared Emitting Diode is part of the Astral portfolio. Vishay VSMA1085750X02 is an 850nm infrared emitting diode with a double stack emitter chip for maximum radiant power. The device has a 42-millimeter chip size, allows 1.5A DC operation, and accommodates pulsed currents up to 5.0A.

Features

  • Surface-mount package type
  • High-power SMD with lens package form
  • 3.4mm x 3.4mm x 1.5mm dimensions (LxWxH)
  • λp = 850nm peak wavelength
  • AEC-Q102 qualified
  • ϕ = ±75° angle of half-intensity
  • Designed for high drive currents up to 1.5A (DC) and up to 5A (pulsed)
  • 5K/W < RthJSP < 9K/W low thermal resistance
  • ESD up to 5kV (according to ANSI/ESDA/JEDEC® JS-001)
  • 168h, MSL 3, according to J-STD-020E floor life
  • Lead Pb-free reflow soldering

Applications

  • Driver and occupant monitoring
  • Eye tracking
  • Safety and security
  • CCTV

Vishay VSMA1085750X02 High Power Infrared Emitting Diode