Vishay / Siliconix SiSD5300DN 30V N-Channel MOSFET

Vishay / Siliconix SiSD5300DN 30V N-Channel MOSFET is a TrenchFET® Gen V power MOSFET utilizing source flip technology that enhances thermal performance. Operating within a -55°C to +150°C junction temperature range, SiSD5300DN features a very low drain-source resistance and gate charge figure of merit (FOM). Applications include DC/DC converters, synchronous rectification, battery management, O-rings, and load switches.

Features

TrenchFET Gen V power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Source flip technology enhances thermal performance
100 % Rg and UIS tested

Single configuration
PowerPAK® 1212-F package type
Lead-free, Halogen-free, and RoHS compliant

Applications

DC/DC converter
Synchronous rectification

Battery management
O-ring and load switches

Specifications

30V maximum drain-source voltage
+16V/-12V maximum gate-source voltage
500A maximum pulsed drain current
198A continuous drain current
87µΩ drain-source on-resistance
57W power dissipation
2V gate-source threshold voltage

27nC gate charge
90ns rise time
15ns fall time
38A maximum single pulse avalanche current
72mJ maximum single pulse avalanche energy
-55°C to +150°C operating junction temperature range

Vishay / Siliconix SiSD5300DN 30V N-Channel MOSFET

Features

Applications

Specifications

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