Transphorm TP65H480G4JSG 650V SuperGaN® GaN FET

Transphorm TP65H480G4JSG 650V SuperGaN® GaN FET is a 480mΩ Gallium Nitride (GaN) normally-off device available in a 5×6 PQFN package. This GaN FET combines a state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET for superior reliability and performance. The TP65H480G4JSG 650V SuperGaN GaN FET uses Gen IV platform, which supports advanced epi and patented design technologies to simplify manufacturability. This GaN FET achieves increased efficiency in both hard- and soft-switched circuits. The TP65H480G4JSG 650V SuperGaN GaN FET is halogen-free and RoHS compliant. Typical applications include consumer, power adapters, low-power SMPS, and lighting.

Features

  • Gen IV technology
  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by:
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • Achieves increased efficiency in both hard- and soft-switched circuits
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Easy to drive with commonly used gate drivers
  • GSD pin layout improves high-speed design
  • RoHS-compliant and halogen-free packaging

Specifications

  • 650V drain to source voltage VDSS
  • 800V transient drain to source voltage VDSS(TR)
  • ±18V gate to source voltage VGSS
  • 13.2W maximum power dissipation (PD) @TC=25°C
  • Continuous drain current ID:
    • 3.6A @TC=25°C
    • 2.3A @TC=100°C
  • 17A pulsed drain current IDM (pulse width: 10µs)
  • 1.6V to 2.8V gate threshold voltage VGS range
  • Drain-source on-resistance:
    • 480mΩ to 560mΩ (VGS=8V, ID=3.4A)
    • 1000mΩ (VGS=8V, ID=3.4A, TJ=150°C)
  • Typical capacitance (VGS=0V, VDS=400V, f=1MHz):
    • 760pF input
    • 9pF output 
    • 1.5pF reverse transfer 
  • Charge (VDS=400V, VGS=0V to 8V, ID=3.4A):
    • 9nC total gate charge
    • 2.1nC gate-source and gate-drain charge
  • 13.5nC output charge (VGS=0V, VDS=0V to 400V)

Applications

  • Consumer
  • Power adapters
  • Low power SMPS
  • Lighting

Circuit Implementation

Schematic - Transphorm TP65H480G4JSG 650V SuperGaN® GaN FET

Performance Graph

Performance Graph - Transphorm TP65H480G4JSG 650V SuperGaN® GaN FET

Transphorm TP65H480G4JSG 650V SuperGaN® GaN FET