Transphorm TP65H480G4JSG 650V SuperGaN® GaN FET is a 480mΩ Gallium Nitride (GaN) normally-off device available in a 5×6 PQFN package. This GaN FET combines a state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET for superior reliability and performance. The TP65H480G4JSG 650V SuperGaN GaN FET uses Gen IV platform, which supports advanced epi and patented design technologies to simplify manufacturability. This GaN FET achieves increased efficiency in both hard- and soft-switched circuits. The TP65H480G4JSG 650V SuperGaN GaN FET is halogen-free and RoHS compliant. Typical applications include consumer, power adapters, low-power SMPS, and lighting.