Transphorm TP65H300G4LSGB 650V SuperGaN® GaN FET

Transphorm TP65H300G4LSGB 650V SuperGaN^® Gallium Nitride (GaN) FET is a 240mΩ normally-off device available in an 8×8 PQFN package. This GaN FET uses Transphorms Gen IV platform, which incorporates advanced epi and patented design technologies to simplify manufacturability. The TP65H300G4LSGB GaN FET combines a state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET for superior reliability and performance. This GaN FET improves efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Typical applications include consumer, power adapters, low-power SMPS, and lighting.

Features

Gen IV technology
JEDEC-qualified GaN technology
Dynamic RDS_(on)eff production tested
Robust design, defined by:
- Wide gate safety margin
- Transient over-voltage capability
Very low Q_RR
Reduced crossover loss

Achieves increased efficiency in both hard- and soft-switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
Easy to drive with commonly used gate drivers
GSD pin layout improves high-speed design
RoHS-compliant and Halogen-free packaging

Specifications

650V drain to source voltage V_DSS
800V transient drain to source voltage V_DSS(TR)
±12V gate to source voltage V_GSS
21W maximum power dissipation (P_D) @T_C=25°C
Continuous drain current I_D:
- 6.5A @T_C=25°C
- 4.1A @T_C=100°C
30A pulsed drain current I_DM (pulse width:10µs)
2V to 2.8V gate threshold voltage V_GS range
Drain-source on-resistance:
- 240mΩ to 312mΩ (V_GS=6V, I_D=6.5A, T_J=25°C)
- 492mΩ (V_GS=6V, I_D=6.5A, T_J=150°C)

Typical capacitance (V_GS=0V, V_DS=400V, f=1MHz):
- 414pF input
- 16pF output
- 1.2pF reverse transfer
Charge (V_DS=400V, V_GS=0V to 10V, I_D=6.5A):
- 5nC total gate charge
- 1.5nC gate-source charge
- 0.8nC gate-drain charge
19nC output charge (V_GS=0V, V_DS=0V to 400V)

Applications

Consumer
Power adapters

Low power SMPS
Lighting

Transphorm TP65H300G4LSGB 650V SuperGaN® GaN FET

Features

Specifications

Applications

Circuit Implementation

Performance Graph

husseinkey ELECTRONICS®

COMPANY