Transphorm TP65H300G4JSGB SuperGaN® GaN FET

Transphorm TP65H300G4JSGB SuperGaN^® Gallium Nitride (GaN) FET combines a state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET for superior reliability and performance. This SuperGaN GaN FET is a normally-off device that uses Transphorm’s Gen IV platform. The Gen IV SuperGaN platform uses advanced epi and patented design technologies to simplify manufacturability. The TP65H300G4JSGB GaN FET features a 650V drain-to-source voltage and 41.6W maximum power dissipation @ T_C=25°C. Typical applications include consumer power adapters, low-power SMPS, and lighting.

Features

Gen IV technology
JEDEC-qualified GaN technology
Dynamic R_DS(on)eff production tested
Robust design, defined by:
- Wide gate safety margin
- Transient over-voltage capability
Very low Q_RR
Reduced crossover loss

Achieves increased efficiency in both hard- and soft-switched circuits:
- Increased power density
- Reduced system size and weight
- Overall lower system cost
RoHS-compliant and Halogen-free packaging

Specifications

650V drain to source voltage V_DSS
800V transient drain to source voltage V_DSS(TR)
±10V gate to source voltage V_GSS
41.6W maximum power dissipation (P_D) @T_C=25°C
Continuous drain current I_D:
- 9.2A @T_C=25°C
- 5.8A @T_C=100°C
30A pulsed drain current I_DM (pulse width: 10µs)
2V to 2.8V gate threshold voltage V_GS range
Drain-source on-resistance:
- 240mΩ to 312mΩ (V_GS=6V, I_D=6.5A, T_J=25°C)
- 492mΩ (V_GS=6V, I_D=6.5A, T_J=150°C)

Typical capacitance (V_GS=0V, V_DS=400V, f=1MHz):
- 400pF input
- 16pF output
- 0.8pF reverse transfer
Charge (V_DS=400V, V_GS=0V to 10V, I_D=6.5A):
- 3.5nC total gate charge
- 1.4nC gate-source charge
- 0.64nC gate-drain charge
19nC output charge (V_GS=0V, V_DS=0V to 400V)

Applications

Consumer
Power adapters

Low-power SMPS
Lighting

Transphorm TP65H300G4JSGB SuperGaN® GaN FET

Features

Specifications

Applications

Circuit Implementation

Performance Graph

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