Transphorm TP65H150BG4JSG 650V SuperGaN® GaN FET

Transphorm TP65H150BG4JSG 650V SuperGaN® Gallium Nitride (GaN) FET is a 650V, 150mΩ normally-off device offering superior quality and performance. TP65H150BG4JSG combines state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies in a 5mm x 6mm PQFN package. Operating within a -55°C to +150°C temperature range, this component features 83W maximum power dissipation, an 10A to 16A maximum continuous drain current range, and a 55A pulsed drain current (maximum). The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Features

Gen IV technology
JEDEC-qualified GaN technology
Dynamic R_DS(on)eff production tested
Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
Very low Q_RR

Reduced crossover loss
Achieves increased efficiency in both hard- and soft-switched circuits
Easy to drive with commonly-used gate drivers
GSD pin layout improves the high-speed design
5mm x 6mm PQFN package
Halogen-free and RoHS compliant

Applications

Consumer
Power adapters

Low power SMPS
Lighting

Specifications

650V maximum drain-to-source voltage
800V maximum transient drain-to-source voltage
±10V maximum gate-to-source voltage
2.0V to 2.8V gate threshold voltage range
150mΩ to 307mΩ typical drain-source on-resistance range
2.5µA to 10µA typical drain-to-source leakage current range
±100nA gate-to-source leakage current
Typical capacitance
- 400pF input
- 37pF output
- 1.2pF reverse transfer
4.9nC typical total gate charge
1.6nC typical gate-source charge
0.8nC gate-drain charge
35nC output charge
8.3A maximum reverse current

1.2V to 1.7V typical reverse voltage range
83W maximum power dissipation at +25°C
Maximum continuous drain currents
- 16A at +25°C
- 10A at +100°C
55A maximum pulsed drain current
24ns typical turn-on delay
3.2ns typical rise time
22ns typical turn-off delay
4ns typical fall time
28.3ns typical reverse recovery time
-55°C to +150°C operating temperature range
+260°C maximum soldering peak temperature
Thermal resistance
- 1.5°C/W junction-to-case
- 50°C/W junction-to-ambient

Transphorm TP65H150BG4JSG 650V SuperGaN® GaN FET

Features

Applications

Specifications

Circuit Implementation

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