Transphorm TP65H070G4RS 650V SuperGaN® FET in TOLT

Transphorm TP65H070G4RS 650V SuperGaN^® FET in TOLT features an on-resistance R_DS(on) of 72mΩ typical in a top-side-cooled, surface-mount TOLT package that meets the JEDEC standard MO-332. The TOLT package offers thermal management flexibility, especially in systems that do not allow for conventional surface-mount devices with bottom-side cooling. The TP65H070G4RS is a normally-off device that combines low-voltage silicon MOSFET and high-voltage GaN HEMT technologies to deliver superior reliability and performance. The Gen IV SuperGaN platform leverages advanced epitaxial (epi) and patented design technologies to streamline manufacturability and enhance efficiency compared to silicon. It achieves this by reducing gate charge, crossover loss, output capacitance, and reverse recovery charge. Transphorm TP65H070G4RS 650V SuperGaN TOLT FET is ideal for datacom, industrial, computing, and other applications.