Transphorm TP65H070G4LSGB 650V SuperGaN® GaN FET

Transphorm TP65H070G4LSGB 650V SuperGaN® Gallium Nitride (GaN) FET is a 650V, 70mΩ normally-off device offering superior quality and performance. TP65H070G4LSGB combines state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies in an 8mm x 8mm PQFN package. Operating within a -55°C to +150°C temperature range, this component features 96W maximum power dissipation, an 18.4A to 29A maximum continuous drain current range, and a 120A pulsed drain current (maximum). The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Features

Gen IV technology
JEDEC-qualified GaN technology
Dynamic R_DS(on)eff production tested
Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
Very low Q_RR

Reduced crossover loss
Achieves increased efficiency in both hard- and soft-switched circuits
Easy to drive with commonly-used gate drivers
GSD pin layout improves the high-speed design
8mm x 8mm PQFN package
Halogen-free and RoHS compliant

Applications

Datacom
Broad industrial
PV inverters

Servo motors
Consumer
Computing

Specifications

650V maximum drain-to-source voltage
800V maximum transient drain-to-source voltage
±20V maximum gate-to-source voltage
3.2V to 4.6V gate threshold voltage range
72mΩ to 148mΩ typical drain-source on-resistance range
3µA to 12µA typical drain-to-source leakage current range
±100nA gate-to-source leakage current
Typical capacitance
- 600pF input
- 74pF output
- 2pF reverse transfer
8.4nC typical total gate charge
3.3nC typical gate-source charge
2.3nC gate-drain charge
78nC output charge
16A maximum reverse current

1.6V to 2.2V typical reverse voltage range
96W maximum power dissipation at +25°C
Maximum continuous drain currents
- 29A at +25°C
- 18.4A at +100°C
120A maximum pulsed drain current
27ns typical turn-on delay
9ns typical rise time
71ns typical turn-off delay
6.5ns typical fall time
34ns typical reverse recovery time
-55°C to +150°C operating temperature range
+260°C maximum soldering peak temperature
Thermal resistance
- 1°C/W junction-to-case
- 62°C/W junction-to-ambient

Transphorm TP65H070G4LSGB 650V SuperGaN® GaN FET

Features

Applications

Specifications

Circuit Implementation

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