Transphorm TP65H050G4YS 650V SuperGaN® FET

Transphorm TP65H050G4YS 650V SuperGaN^® FET is a 50mΩ Gallium Nitride (GaN) normally-off device available in 4 Lead TO-247 package. This Gen IV SuperGaN FET uses Gen IV platform, which supports advanced epi and patented design technologies to simplify manufacturability. The TP65H050G4YS 650V FET combines a state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET for superior reliability and performance. This SuperGaN FET improves efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Typical applications include datacom broad industrial, PV inverter, and servo motor.

Features

JEDEC-qualified GaN technology
Dynamic R_DS(on)eff production tested
Robust design, defined by:
- Wide gate safety margin
- Transient over-voltage capability
Enhanced inrush current capability
Very low Q_RR
Reduced crossover loss

Enables AC-DC bridgeless totem-pole PFC designs:
- Increased power density
- Reduced system size and weight
- Overall lower system cost
Achieves increased efficiency in both hard- and soft-switched circuits
Easy to drive with commonly-used gate drivers
GSD pin layout improves high-speed design

Specifications

650V drain to source voltage V_DSS
800V transient drain to source voltage V_DSS(TR)
±20V gate to source voltage V_GSS
132W maximum power dissipation (P_D) @T_C=25°C
Continuous drain current I_D:
- 35A @T_C=25°C
- 22A @T_C=100°C
150A pulsed drain current I_DM (pulse width: 10µs)
3.3V to 4.8V gate threshold voltage V_GS range (V_DS=V_GS, I_D=0.7mA)
Drain-source on-resistance:
- 50mΩ to 60mΩ (V_GS=10V, I_D=22A)
- 105mΩ (V_GS=10V, I_D=22A, T_J=150°C)

Typical capacitance (V_GS=0V, V_DS=400V, f=1MHz):
- 1000pF input
- 110pF output
- 2.7pF reverse transfer
Charge (V_DS=400V, V_GS=0V to 10V, I_D=6.5A):
- 16nC to 24nC total gate charge
- 6nC gate-source charge
- 5nC gate-drain charge
112nC output charge (V_GS=0V, V_DS=0V to 400V)
50kHz to 100kHz operating frequency range

Applications

Datacom
Broad industrial

PV inverter
Servo motor

Transphorm TP65H050G4YS 650V SuperGaN® FET

Features

Specifications

Applications

Circuit Implementation

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