Transphorm TP65H035G4WSQA 650V SuperGaN® FET

Transphorm TP65H035G4WSQA 650V SuperGaN® FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET. The device offers superior reliability and performance, and with the SuperGaN® platform, it uses advanced epi and patented design technologies to simplify manufacturability. This improves efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.