Toshiba XPQR3004PB 40V 400A Automotive MOSFET

Toshiba XPQR3004PB 40V MOSFET features R_DS(ON) of 0.23mΩ (typical), is capable of 400A, and offers a threshold voltage (V_th) of 2V to 3V. Additional features include +175°C maximum operating temperature and 10µA maximum leakage current (V_DS = 40V). Toshiba XPQR3004PB MOSFET is offered in an L-TOGL package, which offers 0.2°C/W thermal impedance and 750W power dissipation. This device is AEC-Q101 certified and ideal for automotive applications, switching voltage regulators, motor drivers, and DC-DC converters.

Specifications

AEC-Q101 qualified
400A drain current (DC)
40V drain-source voltage
750W power dissipation
Low drain-source on-resistance R_DS(ON)= 0.23mΩ typical (V_GS = 10V)

0.2°C/W thermal impedance
10µA maximum leakage current (V_DS = 40V)
2V to 3V enhancement mode (V_DS = 10V, I_D = 1mA)
624mJ single-pulse avalanche energy
175°C maximum operating temperature
-55°C to +175°C storage temperature range

Applications

Automotive
Switching voltage regulators

Motor drivers
DC-DC converters

Toshiba XPQR3004PB 40V 400A Automotive MOSFET

Specifications

Applications

Switching Time Test Circuit

Packaging and Internal Circuit

Dimension Diagram (mm)

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