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Toshiba TRSx65H Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are 650V devices based on third-generation technology utilizing Schottky metal. These components optimize the junction barrier Schottky (JBS) structure of the second-generation products, lowering the electric field at the Schottky interface and reducing leakage current, delivering enhanced efficiency. TRSx65H achieves a 17% lower forward voltage (1.2V typical) and improves trade-offs between the forward voltage and the total capacitive charge (17nC typical) than 2nd-Gen devices. With an enhanced forward voltage and reverse current ratio, a typical 1.1µA insulation resistance is achieved. Other features include forward DC current of up to 12A and square-wave non-repetitive surge currents of up to 640A.
These SiC SBDs offer reduced power dissipation and contribute to higher efficiency in end-equipment. The Toshiba TRSx65H diodes are available in a TO-220-2L or compact, flat DFN8x8 surface mount package. TRSx65H diodes are intended for efficiency-critical industrial equipment applications, including switching power supplies, electric vehicle (EV) charging stations, and photovoltaic (PV) inverters.
