Toshiba TPH9R00CQH Silicon N-Channel MOSFET

Toshiba TPH9R00CQH Silicon N-Channel MOSFET offers high-speed switching with a small output and gate charge. The TPH9R00CQH is available in an SOP-8 package and operates up to 175°C. The device delivers a low drain-source on-resistance (7.3mΩ), low leakage current (10µA), and 3.3V to 4.3V enhancement mode. The Toshiba TPH9R00CQH Silicon N-Channel MOSFET is ideal for high-efficiency, DC-DC converter, switching voltage regulator, and motor driver applications.

Features

High-speed switching
Q_SW = 11.7nC (typ.) Small gate charge
Q_oss = 87nC (typ.) Small output charge

R_DS(ON) = 7.3mΩ (typ.) (V_GS = 10V) Low drain-source on-resistance
I_DSS = 10µA (max) (V_DS = 150V) Low leakage current
V_th = 3.3V to 4.3V (V_DS = 10V, I_D = 1.0mA) Enhancement mode

Applications

High-efficiency
DC-DC Converters

Switching voltage regulators
Motor drivers

Toshiba TPH9R00CQH Silicon N-Channel MOSFET

Features

Applications

Packaging & Internal Circuits

Switching Time Test Circuit

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