Toshiba TPD4163K/TPD4164K Intelligent Power Devices

Toshiba TPD4163K/TPD4164K Intelligent Power Devices are designed for brushless DC motor drive applications and utilize high-voltage pulse width modulation (PWM) control. These power devices are designed as three-shunt resistor circuits and are fabricated by a high-voltage silicon-on-insulator (SOI) process. Toshiba TPD4163K/TPD4164K Intelligent Power Devices contain level shift high-side drivers, low-side drivers, IGBT outputs, FRDs, and protective functions. These modules are ideal for overcurrent circuits, undervoltage protection circuits, and thermal shutdown circuits. Additional features include built-in bootstrap diodes, built-in 5V regulators, and a three-phase bridge output using IGBTs.

Features

  • High voltage power side and low voltage signal side terminal are separated
  • Ideal for current sensing in three-shunt resistance
  • Bootstrap circuit gives simple high-side supply
  • Built-in bootstrap diodes
  • Dead time can be set as a minimum of 1μs
  • Suitable for a sine-wave from the drive
  • 3-phase bridge output using IGBTs
  • Included overcurrent and undervoltage protection
  • Shutdown function controlled by SD pin
  • Thermal shutdown
  • Built-in 5V (typical) regulator
  • 30-pin DIP type package

Specifications

  • Power supply voltage
    • 600VBB
    • 20VCC
  • 50mA VREG current
  • 20V DIAG voltage
  • 20mA DIAG current
  • ±0.7V IS pin voltage
  • Power dissipation
    • 27W (IGBT 1-phase)
    • 9W (FRD 1-phase)
  • -40°C to +135°C operating junction temperature range

Videos

Block Diagram

Block Diagram - Toshiba TPD4163K/TPD4164K Intelligent Power Devices

Application Circuit Diagram

Application Circuit Diagram - Toshiba TPD4163K/TPD4164K Intelligent Power Devices

Toshiba TPD4163K/TPD4164K Intelligent Power Devices