Toshiba HN1x Bipolar Transistors

Toshiba HN1x Bipolar Transistors are AEC-Q101 qualified and optimized for low-frequency amplifier applications. The HN1x Bipolar Transistors feature high voltage, high collector current, and an excellent hFE linearity. The devices are offered in a small SOT-363 (US6) package.

Features

AEC-Q101 qualified
Small package (Dual type)
High voltage

High collector current of 150mA (max)
High hFE range of 120 to 400
Excellent hFE linearity, hFE (I_C = 0.1mA)/hFE (I_C = 2mA) = 0.95 (typ.)

FE Package Style

Mechanical Drawing - Toshiba HN1x Bipolar Transistors

FU Package Style

Mechanical Drawing - Toshiba HN1x Bipolar Transistors

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