Toshiba 650V & 1200V 3rd Gen Silicon Carbide MOSFETs

Toshiba 650V and 1200V 3rd Generation Silicon Carbide MOSFETs are designed for high-power industrial applications like 400V and 800V AC input AC-DC power supplies, photovoltaic (PV) inverters, and bi-directional DC-DC converters for uninterruptible power supplies (UPS). These Toshiba MOSFETs make significant contributions to reducing power consumption and improving power density due to SiC technology. This technology allows for higher voltages, faster switching, and lower on-resistance. The design offers enhanced reliability in addition to low input capacitance, common gate-input charge, and a drain-to-source on-resistance as low as 15mΩ.

Features

Low V_F
- Built-in Schottky Barrier Diode technology to offer ultra-low V_F
- High reliability with cell design
Low R_ON, R_ONQ_GD
- R_ON Q_GD is reduced by 80% from 2nd to 3rd generation
- Competitive R_ONQ_GD and switching performance

Wider V_GSS rating
- Wide V_GSS ratings help improve design reliability and make design easier
- V_GSS -10V ~ 25V (recommended 18V)
- Low ON resistance and a higher Gate Threshold Voltage (Vth) help prevent malfunctions like accidental turn-on