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Texas Instruments UCC21755-Q1 Automotive Gate Driver is designed for SiC MOSFETs and IGBTs up to 2121Vpk. The UCC21755-Q1 offers advanced protection features, best-in-class dynamic performance, and robustness.
The TI UCC21755-Q1 automotive gate driver has up to ±10A peak source and sink current. The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40-years isolation barrier life, low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).
The UCC21755-Q1 includes state-of-art protection features, including fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior.
The isolated analog to PWM sensor can be utilized for more manageable temperature or voltage sensing. These features additionally increase the drivers’ versatility and simplify the system design effort, size, and cost.