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Texas Instruments UCC21550-Q1 Dual-Channel Gate Drivers

Texas Instruments UCC21550-Q1 Dual-Channel Gate Drivers are designed with a 4A peak source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors. These gate drivers are isolated dual-channel families with programmable dead time and a wide temperature range of -40°C to 150°C. The UCC21550-Q1 drivers enable high efficiency, power density, and robustness in various power applications. The protection features include resistor-programmable dead time, disabling the feature to shut down both outputs simultaneously, and integrating a de-glitch filter that rejects input transients shorter than 5ns. The UCC21550-Q1 drivers are ideal for on-board battery chargers, high-voltage DC-DC converters, automotive HVAC, and body electronics. These UCC21550-Q1 devices are AEC-Q100 qualified for automotive applications.

Features

Universal dual low-side, dual high-side, or half-bridge driver
Switching parameters:
- 33ns typical propagation delay
- 5ns maximum pulse-width distortion
- 10µs maximum VDD power-up delay
-40°C to 150°C junction temperature range
Up to 4A peak source and 6A peak sink output
Common-Mode Transient Immunity (CMTI) greater than 125V/ns

Up to 25V V_DD output drive voltage:
- 5V_DD and 8V_DD UVLO options
UVLO protection for all power supplies
AEC-Q100 qualified with the below results:
- Device temperature grade 1
- Device HBM ESD classification level H2
- Device CDM ESD classification level C4B
Fast disable for power sequencing

Applications

On-board battery chargers
High-voltage DC-DC converters
Automotive HVAC and body electronics

Texas Instruments UCC21550-Q1 Dual-Channel Gate Drivers

Features

Applications

Typical Application Schematic

Block Diagram

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