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http://www.ti.com/general/docs/suppproductinfo.tsp?distId=26&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Flmg3526r050″>View Datasheet
Texas Instrument LMG3526R050 650V GaN FET with integrated driver and protection targets switch-mode power converters and enables designers to achieve new power density and efficiency levels. The LMG3526R050 integrates a silicon driver that enables switching speeds up to 150V/ns. TI offers integrated precision gate bias, resulting in higher switching SOA than discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers minimal ringing and clean switching in hard-switching power supply topologies. The adjustable gate drive strength allows control of the slew rate from 15V/ns to 150V/ns. This control can be used to control EMI and actively optimize switching performance.
Advanced features include digital temperature reporting, fault detection, and zero-voltage detection (ZVD). The temperature of the GaN FET is reported through a variable duty cycle PWM output. Faults reported include overtemperature, overcurrent, and UVLO monitoring. ZVD feature can provide a pulse output from the ZVD pin when zero-voltage switching (ZVS) is realized.
