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http://www.ti.com/general/docs/suppproductinfo.tsp?distId=26&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Flmg2610″>View Datasheet
Texas Instruments LMG2610 GaN Half-Bridge IC is a 650V GaN power-FET half bridge for < 75W active-clamp flyback (ACF) converters in switch-mode power supply applications. The LMG2610 reduces component count, simplifies design, and reduces board space by integrating gate drivers, half-bridge power FETs, bootstrap diode, and high-side gate-drive level shifter in a 9mm by 7mm QFN package. The asymmetric GaN FET resistances are optimized for ACF operating conditions. Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor. It allows the low-side thermal pad to be connected to the cooling PCB power ground.
The high-side gate-drive signal level shifter eliminates burst-mode power dissipation and noise problems found with external solutions. The smart-switched GaN bootstrap FET avoids overcharging the high-side supply, has no diode forward-voltage drop and has zero reverse-recovery charges. The Texas Instruments LMG2610 supports the burst-mode operation and converter light-load efficiency requirements with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shutdown.
