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http://www.ti.com/general/docs/suppproductinfo.tsp?distId=26&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fdrv8329″>View Datasheet
Texas Instruments DRV8329 Three-phase BLDC Gate Driver provides three devices, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8329 generates the correct gate drive voltages using an internal charge pump and enhances the high-side MOSFETs using a bootstrap circuit. Additionally, a trickle charge pump is included to deliver a 100% duty cycle.
The gate drive’s architecture sustains peak gate drive currents up to 1A source and 2A sink. The TI DRV8329 Gate Driver can operate from a single power supply and supports a wide input supply range of 4.5V to 60V. The 6x and 3x PWM modes on the DRV8329 result in simple interfacing to controller circuits. The device has an integrated accurate 3.3V LDO that can power an external controller and a reference for CSA. The configuration settings for the device are configurable through hardware (H/W) pins. The DRV8329 devices integrate a low-side current sense amplifier that permits current sensing for the sum of current from all three phases of the drive stage.
A low-power sleep mode is provided to achieve low quiescent current by shutting down most of the internal circuitry. The device has internal protection functions for undervoltage lockout, GVDD fault, MOSFET overcurrent, MOSFET short circuit, and overtemperature. Fault conditions are indicated on the nFAULT pin.
