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Texas Instruments DRV8300U Three-Phase Gate Driver is 100V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300UD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents.
The phase pins SHx can tolerate the significant negative voltage transients. At the same time, the high side gate driver supply BSTx and GHx can support higher positive voltage transients (125V) abs max voltage which improves the system’s robustness. Small propagation delay and delay matching specifications minimize the deadtime requirement, further improving efficiency. Undervoltage protection is provided for both the low and high-side of the Texas Instruments DRV8300U through GVDD and BST undervoltage lockout.









