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STMicroelectronics STP65N045M9 MDmesh M9 Power MOSFET

STMicroelectronics STP65N045M9 MDmesh M9 Power MOSFET is designed for medium/high voltage MOSFETs featuring very low RDS(on) per area. The device implements innovative super-junction MDmesh M9 technology offering a multi-drain manufacturing process that allows for an enhanced device structure.

The STM STP65N045M9 MDmesh M9 Power MOSFET has a low on-resistance and reduced gate charge values. These features make the STP65N045M9 particularly suitable for applications that require superior power density and outstanding efficiency.

Features

  • Excellent RDS(on) per area among silicon-based devices
  • Higher VDSS rating
  • Higher dv/dt capability
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested

Typical Application

Application Circuit Diagram - STMicroelectronics STP65N045M9 MDmesh M9 Power MOSFET

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STMicroelectronics STP65N045M9 MDmesh M9 Power MOSFET