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STMicroelectronics STL325N4LF8AG N-Channel Power MOSFET

STMicroelectronics STL325N4LF8AG N-Channel Power MOSFET utilizes STripFET F8 technology and features an enhanced trench gate structure. The STL325N4LF8AG ensures very low on-state resistance. The device also reduces internal capacitances and gate charges for faster and more efficient switching.

Features

AEC-Q101 qualified
MSL1 grade
175°C operating temperature
100% avalanche tested
Wettable flank package
Excellent body drain diode softness
Low EMI noise emission
Low output capacitance and series resistance

Low spikes for the drain-source voltage at turn-off and short oscillation time
Low gate-drain charge
Fast turn-off and low switching losses
Tight gate threshold voltage spread
Easy parallel connection
Very high current capability
High short circuit ruggedness

Applications

Switching applications
Power conversion

Motor control
Power distribution

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