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STMicroelectronics STGSH80HB65DAG 650V 80A HB Series IGBT

STMicroelectronics STGSH80HB65DAG 650V 80A HB Series IGBT features two IGBTs and diodes in a compact, rugged, surface-mounted package. The STMicroelectronics STGSH80HB65DAG IGBT is optimized for soft commutation, minimizing conduction and switching losses. Each switch includes a low-drop freewheeling diode, making it ideal for efficient resonant and soft-switching applications.

Features

AQG 324 qualified
High-speed switching series
T_J = 175°C maximum junction temperature
Low V_CE(sat) = 1.7V (typ.) @ I_C = 80A
Minimized tail current

Tight parameter distribution
Low thermal resistance thanks to DBC substrate
Positive temperature V_CE(sat) coefficient
Soft and high-speed recovery antiparallel diode
Isolation rating of 3.4kVrms/min

Applications

DC/DC converter for EV/HEV
On board charger (OBC)

Schematic and pin description

Schematic - STMicroelectronics STGSH80HB65DAG 650V 80A HB Series IGBT

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