- support@husseinkey.com
- livechat
STMicroelectronics STDRIVEG600 Half-Bridge Gate Driver is a single-chip half-bridge gate driver for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V. This device is ideal for driving high-speed GaN and silicon FETs due to its high current capability, short propagation delay, and operation with a supply voltage down to 5V.
The STDRIVEG600 features UVLO (Undervoltage-Lockout) protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions. The device also includes an interlocking function that eliminates cross-conduction conditions.
The logic inputs are CMOS/TTL compatible down to 3.3V for easy interfacing with microcontrollers and DSPs.
The STMicroelectronics STDRIVEG600 Half-Bridge Gate Driver is available in a SO-16 package with a -40°C to 150°C operating junction temperature range.
