STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high power density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an R_DS(ON) of 150mΩ and 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

The STM MASTERGAN Drivers provides UVLO protection on both the lower and upper driving sections. This protection prevents the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The extended range of the input pins allows easy interfacing with microcontrollers, DSP units, or Hall effect sensors.

The MASTERGAN Drivers operate in the industrial temperature range of -40°C to +125°C and is available in a compact 9mm x 9mm QFN package.

Features

Power system-in-package integrating half-bridge gate driver and high-voltage GaN transistors:
- BV_DSS = 650V
- R_DS(ON) = 150mΩ
- I_DS(MAX) = 10A
Reverse current capability
Zero reverse recovery loss
UVLO protection on low-side and high-side
Internal bootstrap diode
Interlocking function

Dedicated pin for shutdown functionality
Accurate internal timing match
3.3V to 15V compatible inputs with hysteresis and pull-down
Overtemperature protection
Bill-of-material reduction
Very compact and simplified layout
Flexible, easy, and fast design

Applications

Switch-mode power supplies
High-voltage PFC, DC-DC, and DC-AC converters

Chargers and adapters
Uninterruptible power supply (UPS) systems
Solar power

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STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers

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STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers

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