STMicroelectronics M95P32 Ultra Low-Power 32Mbit SPI Page EEPROM

STMicroelectronics M95P32 Ultra Low-Power 32Mbit SPI Page EEPROM is optimized for mobile and wearable designs. The M95P32 32Mbit SPI Page EEPROM features a rich feature set, ultra-low power consumption, and high memory density. This device combines the patented e-STM 40nm non-volatile memory (NVM) cell technology with smart page architecture, bringing together the benefits of high memory density for firmware with byte flexibility and high endurance for simplified data logging. The M95P3 also features fast read, erase, and program cycles, reducing manufacturing costs and application downtimes by enabling rapid upload and download. Fast power-up and quad-output read to allow for faster application wake-up.

The M95P32 EEPROM offers byte and page write instructions of up to 512bytes. Write instructions consist of self-timed auto-erase and program operations, resulting in flexible data byte management. The device also accepts page/block/sector/chip erase commands to set the memory to an erased state. The memory can then be fast-programmed by pages of 512bytes and further optimized using “page program with buffer load” to hide the SPI communication latency. 

An all-in-one memory designed for ultra-low power, efficient data logging, and fast firmware upload/download, The STMicroelectronics M95P32 32Mbit SPI Page EEPROM simplifies NVM integration, reduces BOM cost, and boosts power efficiency.

Features

  • SPI interface
    • Supports serial peripheral interface (SPI) and dual/quad outputs
    • Wide voltage range of VCC from 1.6V to 3.6V
    • Temperature range
      • -40°C to +85°C industrial
      • -40°C to +105°C extended 
    • Fast read
      • 50MHz read single output
      • 80MHz fast read single/dual/quad output with one dummy byte
  • Memory
    • 32Mbits of page EEPROM
      • 64Kbyte blocks, 4Kbyte sectors
      • 512byte page size
      • Two identification pages
    • Write endurance of 500kcycles on the full temperature range
    • Data retention
      • 100 years
      • 10 years after 500kcycles
  • Ultra-low power consumption
    • 6μA (typical) in deep power-down mode
    • 16μA (typical) in Standby mode
    • 800μA (typical) for read single at 10MHz
    • 2mA (typical) for page write
    • Current peak control <3mA
  • High write-erase performance
    • Fast Write/Prog/Erase times
      • 2ms (typical) for byte and page write (includes auto-erase and program) for 512bytes
      • 2ms (typical) for page program (512bytes)
      • 9ms (typical) for page erase
      • 1ms (typical) for sector erase
      • 7ms (typical) for block erase
      • 15ms (typical) for chip erase
    • Page program with buffer load
  • Advanced features
    • ECC for high memory reliability (DEC, TED)
    • Schmitt trigger inputs for noise filtering
    • Output buffer programmable strength
    • Operating status flags for ISO26262
    • Software reset
    • Write protection by block, with top/bottom option
    • Unique ID upon request
    • Electronic identification
    • Support of serial flash memory discoverable parameters (SFDP) mode
    • JEDEC standard manufacturer identification
  • Package options
    • DFN8, SO8N, and WLCSP8 ECOPACK2 packages
    • Halogen-free and RoHS compliant
  • ESD protection
    • 200V HBM (human body model)
    • 500V CDM

Applications

  • Industrial IoT modules
  • Wearables
  • Healthcare
  • Medical
  • Electronic shelf-edge labeling
  • Smart meters
  • 5G optical-fiber modules

Videos

Block Diagram

Block Diagram - STMicroelectronics M95P32 Ultra Low-Power 32Mbit SPI Page EEPROM

STMicroelectronics M95P32 Ultra Low-Power 32Mbit SPI Page EEPROM