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STMicroelectronics EVSTGAP2SICSAC Demonstration Board

STMicroelectronics EVSTGAP2SICSAC Demonstration Board is designed to evaluate the STGAP2SICSAC isolated single gate driver and drives a half-bridge power stage with up to a 520V voltage. This demonstration board allows the user to increase bus voltage by replacing the power switches with appropriate devices in H2PACK-7L or H2PACK-2L, or HU3PAK package. The EVSTGAP2SICSAC board implements negative gate driving, and the onboard isolated DC-DC converters allow working with optimized driving voltage for SiC MOSFET. This demonstration board is ideal for mid and high-power inverter applications such as motor drivers in industrial applications equipped with SiC MOSFET power switches.

Features

  • Half bridge configuration, high voltage rail up to 520V
  • SCT055H65G3AG 650V, 58mΩ typical, and 30A 3rd generation SiC MOSFET
  • Negative gate driving
  • 17V/0V, 17V/-3V, 19V/0V, and 19V/-3 V jumper selection of driving voltage configuration
  • On-board isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5V, with 5.2kV maximum isolation
  • VDD logic supplied by on-board generated 3.3V or VAUX = 5V
Schematic - STMicroelectronics EVSTGAP2SICSAC Demonstration Board

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STMicroelectronics EVSTGAP2SICSAC Demonstration Board