STMicroelectronics EVSTGAP2GS Demonstration Board

STMicroelectronics EVSTGAP2GS Demonstration Board is engineered to evaluate the STGAP2GS isolated single gate driver. The STGAP2GS comprises 2A source/3A sink capability and rail-to-rail outputs. These features make the device ideal for mid and high-power inverter applications. The device independently optimizes turn-on and turn-off by using dedicated gate resistors.

The STMicro EVSTGAP2GS board enables evaluation of all the STGAP2GS options driving the SGT120R65AL 75mΩ, 650V e-Mode GaN transistors. The board components are easy to access and modify, making driver performance evaluation easier under different application conditions and fine adjustment of final components.

Features

Device
- High voltage rail up to 1200V
- 2A/3A source/sink at +25°C, VH = 6V Driver current capability
- Separate sink and source for easy gate-driving configuration
- 45ns Input-output propagation delay
- UVLO function optimized for GaN
- Gate driving voltage up to 15V
- 3.3V, 5V TTL/CMOS inputs with hysteresis
- Temperature shut-down protection

Board
- Half bridge configuration, high voltage rail up to 650V
- SGT120R65AL with 650V, 75mΩ typ., 15A, e-mode PowerGaN transistor
- Negative gate driving
- On-board isolated DC-DC converters to supply high-side and low-side gate drivers, fed by VAUX = 5V, with 5.2kV maximum isolation
- VDD logic supplied by on-board 3.3V or VAUX = 5V
- +6V/0V; +6V/-3V Easy jumper selection of driving voltage configuration

STMicroelectronics EVSTGAP2GS Demonstration Board

Features

Component placement top

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