ROHM Semiconductor YQx0 Automotive-Grade Schottky Barrier Diodes

ROHM Semiconductor YQx0 Automotive-Grade Schottky Barrier Diodes provide low forward voltages, reverse currents, and capacitances with high reliability. The AEC-Q101 qualified YQx0 Schottky Barrier Diodes feature a Trench MOS structure with a +150°C junction temperature. Applications include automotive, switching power supplies, freewheeling diodes, and reverse polarity protection.

Features

AEC-Q101 qualified
High reliability
Power mold type
Low forward voltage and reverse current

Low capacitance
Trench MOS structure
Cathode common dual type available
TO-252, TO-263L, and TO-277A package options

Applications

Automotive
Switching power supplies

Freewheel diodes
Reverse polarity protection

Specifications

100V repetitive peak reverse voltage
100V reverse voltage
Reverse currents
- 70μA, 80μA, or 150μA maximum at +25°C
- 20mA or 40mA maximum at +125°C

20A average rectified forward current
0.62V to 0.86V maximum forward voltage range
150A or 200A peak forward surge currents
+150°C junction temperature

Inner Circuits

ROHM Semiconductor YQx0 Automotive-Grade Schottky Barrier Diodes

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