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ROHM Semiconductor YQx High Efficient Schottky Barrier Diodes

ROHM Semiconductor YQx High Efficient Schottky Barrier Diodes are designed to improve the tradeoff between low VF and low IR. Despite low VF values, these devices consistently deliver stable performances even when subjected to higher temperatures. These highly efficient power mold-type Schottky barrier diodes exhibit trench MOS structures. The YQx Schottky barrier diodes offer 100V reverse voltage, high reliability, and low capacitances. These devices are ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

Features

  • High reliability
  • Low VF and low IR
  • Small power mold types
  • Trench MOS structures
  • Low capacitances
  • Low power consumption
  • Stable operation at high temperatures
  • AEC-Q101 variants available

Specifications

  • 100V reverse direct voltage (VR) 
  • 100V repetitive peak reverse voltage (VRM)
  • +175°C junction temperature (Tj) 
  • -55°C to +175°C storage temperature range (Tstg) 

Applications

  • Switching power supplies
  • Freewheel diodes
  • Reverse polarity protection 
  • Auotmotive (Selcted models)

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ROHM Semiconductor YQx High Efficient Schottky Barrier Diodes