ROHM Semiconductor RS6N120BH N-Channel Power MOSFET

ROHM Semiconductor RS6N120BH N-Channel Power MOSFET is a compact low-loss MOSFET featuring a Cu clip structure contributing to high-efficiency operation. The system increases current capacity while reducing package resistance. This feature makes the RS6N120BH ideal for drive applications that operate on 24V/36V/48V power supplies.

Features

Ideal for switching applications
High power 5mm x 6mm x 1mm HSOP8S Cu clip package
Simultaneous low ON-resistance and gate charge capacitance (trade-off relationship) minimizes energy loss

Surface mount
Enhancement mode
Lead-free plating
100% Rg and UIS tested
Halogen-free and RoHS compliant

Applications

Switching applications
Power supplies for servers and base stations
Various motor-driven equipment (industrial/consumer)

Specifications

8x terminals
80V drain-source breakdown voltage
58mV/°C typical breakdown voltage temperature coefficient
±135A continuous drain current
±540A pulsed drain current
±20V gate-source voltage
33nC to 53nC typical total gate charge range
1.3Ω typical gate resistance
104W power dissipation
6V drive voltage
1.2V maximum forward voltage
5µA maximum zero gate voltage drain current

30A single pulse avalanche current
74mJ single pulse avalanche energy
42S minimum forward transfer admittance
3420pF typical input capacitance
1020pF typical output capacitance
35pF typical reverse transfer capacitance
32ns typical turn-on delay time
47ns typical rise time
73ns typical turn-off delay time
35ns typical fall time
-55°C to +150°C operating temperature range

ROHM Semiconductor RS6N120BH N-Channel Power MOSFET

Features

Applications

Specifications

Inner Circuit

Structure Comparison

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