ROHM Semiconductor RH6 N-Channel Power MOSFETs

ROHM Semiconductor RH6 N-Channel Power MOSFETs offer a low on-resistance in a small, high-power, 8-pin, surface mount molded package (HSMT-8). The RH6 MOSFETs feature a 59W power dissipation and a -55°C to +150°C operating temperature range. ROHM RH6 N-Channel Power MOSFETs are designed for switching applications.

Features

Low on-resistance
Single channel
Enhancement mode
Si technology

High power, small molded package (HSMT-8)
Surface mount
Lead-free plating
Halogen-free and RoHS compliant

Specifications

8-pin
25A to 95A continuous drain current range
±20V gate-source voltage
59W power dissipation
35ns to 51ns typical turn-off delay time range
15ns to 19ns typical turn-on delay time range
8ns to 17ns fall time range

9.5ns to 20ns rise time range
3.6mΩ to 73mΩ on-drain source resistance range
16.7nC to 25nC gate charge range
60V to 150V drain-source breakdown voltage range
2.5V or 4V gate-source threshold voltage range
-55°C to +150°C operating temperature range

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