ROHM Semiconductor RASMID Silicon RF Capacitors

ROHM Semiconductor RASMID Silicon RF Capacitors offer high reliability, 180μm low profile, and 3.6V rated voltage. These silicon capacitors deliver high shear strength by large electrode sizes. The RASMID silicon RF capacitors feature up to 1000pF typical capacitance, ±10μm dimension tolerance, and ±8kV (HBM) ESD protection level. These capacitors operate at -55°C to 150°C temperature range, -15% to 15% capacitance tolerance, and 8.2V to 9.2V reverse breakdown voltages. The RASMID silicon RF capacitors come in a 0.4mm x 0.2mm package and are ideal for wireless, wearable equipment, and optical transceivers.

Features

  • Typical capacitance:
    • 1000pF (BTD1RVFLT27N102)
    • 470pF (BTD1RVFLT27N471)
  • High reliability
  • 180μm low profile
  • ±8kV (HBM) ESD protection level
  • ±10μm dimension tolerance
  • High shear strength by large electrode size
  • 3.6V rated voltage
  • 0.4mm x 0.2mm package
  • -55°C to 150°C operating temperature range
  • -15% to 15% capacitance tolerance
  • 8.2V to 9.2V reverse breakdown voltages
  • 10GΩ typical insulation resistor

Applications

  • Wireless
  • Wearable equipment
  • Optical transceiver

Inner Circuit Diagram

Application Circuit Diagram - ROHM Semiconductor RASMID Silicon RF Capacitors

Characteristic Curves

Performance Graph - ROHM Semiconductor RASMID Silicon RF Capacitors

Dimension Diagram

Mechanical Drawing - ROHM Semiconductor RASMID Silicon RF Capacitors

ROHM Semiconductor RASMID Silicon RF Capacitors