ROHM Semiconductor RA1C030LD WLCSP MOSFET

ROHM Semiconductor RA1C030LD WLCSP MOSFET is an N-channel MOSFET designed with a low on-resistance and high power package. This device features a 20V_DSS drain-source voltage, 3A continuous drain current, and 1W power dissipation. The RA1C030LD MOSFET offers 1.8V drive voltage, Electro-Static Discharge (ESD) protection up to 200V (MM), and up to 2kV (HBM). This MOSFET is suitable for switching circuits, single-cell battery applications, and mobile applications. The RA1C030LD MOSFET is Pb-free, halogen-free, and RoHS-compliant device.

Features

20V_DSS drain-source voltage
3A continuous drain current
Low on-resistance
High-power small package
Wafer Level Chip Size Package (WLCSP)
ESD protection up to 200V (MM) and up to 2kV (HBM)

N-channel and 3 terminal
1W power dissipation
1.8V drive voltage
Pb-free lead plating
RoHS compliant
Halogen Free

Applications

Switching circuits
Single-cell battery
Mobile

ROHM Semiconductor RA1C030LD WLCSP MOSFET

Features

Applications

Inner Circuit

Dimensions

Package Comparison Diagram

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