ROHM Semiconductor R6049YN N-Channel Power MOSFETs

ROHM Semiconductor R6049YN N-Channel Power MOSFETs offer high-speed switching and low-on resistances for switching applications. Operating in a -55°C to +150°C temperature range, these single-channel enhancement mode devices feature a 600V drain-source breakdown voltage, a ±22A or ±49A continuous drain current, and a 65nC total gate charge. The ROHM R6049YN N-Channel Power MOSFETs are available in TO-220AB-3, TO-220FM-3, and TO-247G-3 package options.

Features

Low on-resistance
Fast switching
Drive circuits can be simple
Si technology

Enhancement channel mode
Through-hole mount
Halogen-free mold compound
Lead-free plating and RoHS-compliant

Specifications

600V drain-source breakdown voltage
±22A or ±49A continuous drain current
±147A pulsed drain current
82mΩ on-drain-source resistance
±30V gate-source voltage
4V to 6V gate-source threshold voltage range
100μA maximum zero gate voltage drain current
±100nA maximum gate-source leakage current
49A maximum source current
1.5V maximum source-drain voltage
1.0Ω typical gate resistance
6.5μC typical reverse recovery charge
34A typical peak reverse recovery current
Typical gate charge
- 65nC total
- 21nC source
- 30nC drain
7V typical gate plateau voltage

90W or 448W power dissipation
Typical capacitance
- 2940pF input
- 100pF output
- Effective output
  - 100pF energy related
  - 650pF time related
Single pulse avalanche
- 2.8A current
- 208mJ energy
Typical time
- 38ns turn-on delay
- 33ns rise
- 91ns turn-off delay
- 19ns fall
- 380ns reverse recovery
-55°C to +150°C operating temperature range
TO-220AB-3, TO-220FM-3, and TO-247G-3 package options

Datasheets

R6049YNX
R6049YNX3
R6049YNZ4

ROHM Semiconductor R6049YN N-Channel Power MOSFETs

Features

Specifications

Datasheets

Inner Circuit

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