ROHM Semiconductor Nano Cap™ 650V GaN HEMT Power Stage ICs

ROHM Semiconductor Nano Cap™ 650V GaN HEMT Power Stage ICs are designed for demanding electronics systems. The ROHM Semiconductor ICs boast a blend of high power density and efficiency. The device integrates a 650V enhancement GaN HEMT and a silicon driver.

Features

Nano Cap™ integrated output selectable 5V LDO
Long-time support product for industrial applications
Wide operating range for V_DD pin voltage
Wide operating range for IN pin voltage
Low V_DD quiescent and operating current
Low propagation delay

High dv/dt immunity
Adjustable gate drive strength
Power good signal output
V_DD UVLO protection
Thermal shutdown protection

Applications

Industrial equipment
Power supplies with high power density
High-efficiency demand

Bridge topology such as totem-pole PFC
LLC power supply
Adaptors

Videos

Typical Application Circuit

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