ROHM Semiconductor HP8K/HT8K Dual Channel Enhancement Mode MOSFETs

ROHM Semiconductor HP8K/HT8K Dual Channel Enhancement Mode MOSFETs offer dual N-channel or N-channel/P-channel transistor polarity. The HP8K and HT8K MOSFETs are available in small, surface-mount HSMT8 and HSOP8 backside heat-dissipating dual packages that provide low on-resistances and energy savings. Applications include single-/three-phase brushless motor drives or switching operations.

Features

Low on-resistances
Small HSMT8 and HSOP8 surface mount packages
High power

Si technology
Lead-free plating
Halogen-free and RoHS compliant

Applications

Switching
Motor drives

Specifications

100V drain-source voltage
±2.5A to ±24A continuous drain current range
±10A to ±40A pulsed drain current range
±20V gate-source voltage
2.5V gate-source threshold voltage
2.5A to 10.0A avalanche current range, single pulse
0.45mJ to 8.0mJ avalanche energy range, single pulse
2W to 26W power dissipation range
1.9Ω to 17Ω gate resistance range
1.6S to 9S minimum forward transfer admittance range
27.8mΩ to 303mΩ on-drain-source resistance range

2.9nC to 19.8nC gate charge range
Typical capacitance
- 90pF, 305pF, or 1100pF input options
- 25pF, 80pF, or 215pF output options
- 4pF, 6pF, or 12pF reverse transfer options
Typical delay time ranges
- 6ns to 15ns turn-on range
- 13ns to 98ns turn-off range
6ns to 22ns rise time range
5ns to 50ns fall time range
-55°C to +150°C operating junction temperature range

ROHM Semiconductor HP8K/HT8K Dual Channel Enhancement Mode MOSFETs

Features

Applications

Specifications

Infographics

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