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ROHM Semiconductor 600V 4th Gen PrestoMOS™ Super Junction MOSFETs utilize original patented technology to accelerate the parasitic diode, achieving ultra-fast reverse recovery characteristics to achieve low power consumption. The PrestoMOS design enables a reduction in power loss of about 58% at light loads when compared with IGBT implementations. Additionally, raising the reference voltage needed to turn ON the MOSFET prevents self-turn-ON, which is one of the main causes of loss. The optimized built-in parasitic diode improves the soft recovery index specific to Super Junction MOSFETs, which reduces noise that can lead to malfunction.
The ROHM Semiconductor 600V 4th Gen PrestoMOS Super Junction MOSFETs are N-channel devices featuring a low on-resistance of 71mΩ to 114mΩ, a 9A to 77A continuous drain current, and a 120V/ns MOSFET dv/dt. These MOSFETS are available in TO-220FM-3, TO-220AB-3, and TO-247-3 package types and feature a wide -55℃ to +150℃ operating junction and storage temperature range.
