ROHM Semiconductor 4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

Features

Low on-resistance with improving short-circuit ruggedness
Minimizes switching loss by drastically reducing parasitic capacitance
Supports 15V Gate-Source voltage, improving application design freedom
Fast switching speed
Fast reverse recovery
Easy to parallel
Simple to drive

Silicon Carbide (SiC) technology
N-Channel transistor polarity
Single-channel
Through-hole mounting
Enhancement mode
+175°C maximum operating temperature
AEC-Q101-qualified options available
Lead-free, RoHS and REACH compliant

Applications

Automobile
Switch mode power supplies
Solar inverters

DC/DC converters
Induction heating
Motor drives

Specifications

3 to 7 pins
-4V to +21V gate-source voltage range, 4.8V threshold
63nC to 170nC gate-charge range
26A to 105A continuous drain current range
13mΩ to 62mΩ on-drain source resistance
750V or 1.2kV Drain-source breakdown voltage
11ns to 57ns rise time
9.6ns to 21ns fall time

Typical delay time
- 4.4ns to 20ns turn-on range
- 22ns to 83ns turn-off range
93W to 312W power dissipation range
Available packages
- TO-247-4L
- TO-247N-3
- TO-263-7L

ROHM Semiconductor 4th Generation N-Channel SiC Power MOSFETs

Features

Applications

Specifications

Videos

Performance

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