Renesas Electronics RAA226110 Low-Side Drivers

Renesas Electronics RAA226110 Low-Side Drivers is designed to drive enhancement-mode Gallium Nitride (GaN) FETs in isolated and non-isolated topologies. The RAA226110 operates with a supply voltage from 6.5V to 18V. It has inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device.

Features

Wide operating voltage range of 6.5V to 18V
Up to 18V logic inputs (regardless of VDD level)
- Inverting and non-inverting inputs
Optimized to drive enhancement mode GaN FETs
- Internal 5.8V regulated gate drive voltage
- Independent outputs for adjustable turn-on/turn-off speeds
- Source current programmable 0.3A, 0.75A, 2A
- Overcurrent protection with adjustable thresholds of 40mV, 80mV, 120mV

Fault pin and over-temperature protection
-40°C to +125°C operating temperature range
Flyback and forward converters
Boost and PFC converters
Secondary synchronous FET drivers

Applications

Switching-mode power supply
GaN FET driver application

Renesas Electronics RAA226110 Low-Side Drivers

Features

Applications

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