Renesas Electronics M3xxx316 Parallel MRAM Memory

Renesas M3xxx316 Parallel MRAM Memory is a magneto-resistive random-access memory (MRAM) offered in density ranging from 4Mbit to 32Mbit. MRAM technology is analogous to Flash technology with SRAM compatible 35ns/35ns and 45ns/45ns read/write timings (Persistent SRAM, P-SRAM). Data is always non-volatile. This feature makes MRAM a very reliable and fast non-volatile memory solution.

MRAM is a true random-access memory that allows both reads and writes to occur randomly in memory. MRAM is ideal for applications that must store and retrieve data without incurring large latency penalties. It offers low latency, low power, virtually unlimited endurance and data retention, high performance, and scalable memory technology.

Renesas Electronics M3xxx316 is offered with industrial (-40°C to 85°C) and industrial plus (-40°C to 105°C) operating temperature ranges.

Features

Interface
- Parallel asynchronous x16
Technology
- 40nm pMTJ STT-MRAM
Data Retention
- 4Mb, 8Mb, 16Mb, 32Mb
Operating voltage range
- V_CC: 2.70V – 3.60V
Operating temperature range
- -40°C to 85°C Industrial
- -40°C to 105°C Industrial Plus

RoHS compliant & REACH compliant
Packages
- 44-pin TSOP (10mm x 18mm)
- 54-pin TSOP (10mm x 22mm)
- 48-ball FBGA (10mm x 10mm)
Memory array organization
- 4Mbit – 262,144 x 16
- 8Mbit – 524,288 x 16
- 16Mbit – 1,048,576 x 16
- 32Mbit – 2,097,152 x 16

Applications

Ideal for applications that must store and retrieve data without incurring large latency penalties
Factory automation
Multifunction printers

Industrial control and monitoring
Medical diagnostics
Data switches and routers
Smart meter

Renesas Electronics M3xxx316 Parallel MRAM Memory

Features

Applications

Videos

Block Diagram

husseinkey ELECTRONICS®

COMPANY