Rectron RM150N60HD N-Channel Enhancement Mode Power MOSFET

Rectron RM150N60HD N-Channel Enhancement Mode Power MOSFET uses advanced Trench technology and design to provide excellent R_DS(ON) and a low gate charge. This device features good stability and uniformity with high single pulse avalanche energy. The RM150N60HD is ideal for hard-switched and high-frequency circuits, power switching, and uninterruptible power supplies.

The Rectron RM150N60HD N-Channel Enhancement Mode Power MOSFET is available in a compact TO-263-2L package, ideal for space-constrained applications.

Features

60V drain-source voltage (V_DS)
150A continuous drain current (I_D)
600A pulsed drain current (I_DM)
3.6mΩ typical R_DS(ON)
163nC total gate charge (Q_g)
Excellent Q_g x R_DS(on)
220W maximum power dissipation (P_D)

6500pF input capacitance (C_ISS)
650pF output capacitance (C_OSS)
-55°C To 175°C operating junction and storage temperature range (T_J, T_STG)
TO-263-2L package
Pb-free lead plating
100% UIS tested

Applications

Power switching applications
Hard-switched and high-frequency circuits
Uninterruptible power supplies

Test Circuits

Application Circuit Diagram - Rectron RM150N60HD N-Channel Enhancement Mode Power MOSFET

Package Outline

Mechanical Drawing - Rectron RM150N60HD N-Channel Enhancement Mode Power MOSFET

husseinkey ELECTRONICS®

COMPANY