Qorvo SiC E1B Modules

Qorvo SiC E1B Modules feature a unique ‘cascode’ circuit with a normally-on SiC JFET co-packaged with a Si MOSFET, resulting in a normally-off SiC FET. The Qorvo SiC E1B has a silicon-like gate drive that supports unipolar gate drives compatible with Si IGBTs, Si FETs, SiC MOSFETs, or Si super junction devices. Housed in the E1B module package, the device boasts ultra-low gate charge and excellent switching characteristics, making it ideal for hard-switching and ZVS soft-switching applications. The module incorporates advanced Ag sintering die attach technology for superior power cycling and thermal performance.