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Qorvo QPD2160D 1600µm Discrete GaAs pHEMT (Pseudomorphic High-Electron-Mobility-Transistor) features a DC to 20GHz operating frequency. The QPD2160D typically provides 32.5dBm of output power at P1dB with a gain of 10.4dB and 63% power-added efficiency at 1dB compression. This performance makes the QPD2160D appropriate for high-efficiency applications.
The QPD2160D is designed using a 0.25µm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The Qorvo QPD2160D GaAs pHEMT is offered in a 0.41mm x 0.54mm x 0.10mm bare die. The device features a protective overcoat layer with silicon nitride providing high environmental robustness and scratch protection.
